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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The PA1723 is N-Channel MOS Field Effect Transistor designed for power management switch.
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* Low on-state resistance RDS(on)1 = 6.7 m MAX. (VGS = 4.5 V, ID = 7.0 A)
1.44
RDS(on)2 = 7.4 m MAX. (VGS = 4.0 V, ID = 7.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 0.3 4.4
+0.10 -0.05
0.8
RDS(on)3 = 8.7 m MAX. (VGS = 2.5 V, ID = 7.0 A) * Low Ciss : Ciss = 3800 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1723G
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 12 13 52 2.0 150 -55 to + 150
2
V V A A W C C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Gate
Body Diode
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark
Gate Protection Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14026EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 1999
PA1723
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 4.5 V, ID = 7.0 A VGS = 4.0 V, ID = 7.0 A VGS = 2.5 V, ID = 7.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.0 A VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 7.0 A VGS(on) = 4.5 V VDD = 10 V RG = 10 ID = 13 A VDD = 16 V VGS = 4.5 V IF = 13.0 A, VGS = 0 V IF = 13.0 A, VGS = 0 V di/dt = 100 A/ s 3800 1200 700 70 440 230 300 47.0 11.0 12.0 0.75 68 70 0.5 15.0 MIN. TYP. 5.4 5.5 6.5 0.9 32 10 10 MAX. 6.7 7.4 8.7 1.5 UNIT m m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
D.U.T. IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet G14026EJ2V0DS
PA1723
TYPICAL CHARACTERISTICS (TA = 25C)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 50
ID - Drain Current - A
ID - Drain Current - A
10
40 30 VGS = 4.5 V 20 10 VGS = 4.0 V VGS = 2.5 V
1
TA = 125C 75C 25C -25C VDS = 10 V 4 3
0.1 0 1 2
0 0.0
0.1
0.2
0.3
0.4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 8 ID = 3 A ID = 6 A 6
8
6
4
VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V
4
2
2
0 - 100
- 50
0
50
100
150
0
0
5 VGS - Gate to Source Voltage - V
10
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
10 Pulsed 8 VGS = 2.5 V 6 VGS = 4.0 V VGS = 4.5 V 4
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 VDS = 10 V ID = 1 mA
0.5
2
0
0.1
1
10
100
0.2
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
Data Sheet G14026EJ2V0DS
3
PA1723
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
|yfs| - Forward Transfer Admittance - S
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 000
IF - Diode Forward Current - A
100
VDS =10 V Pulsed TC = -25C
TC = 25C
Pulsed
100
10
TC = 75C TC = 125C
VGS = 4.0 V VGS = 0 V
10
1
1
0.1 0.1
1
10
100
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID- Drain Current - A
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 10 000
VGS = 0 V f = 1 MHz
1 000
tr tf td(off)
10 000 Ciss 1 000
100
td(on)
Coss Crss
10 VDS = 10 V VGS = 4.5 V RG = 10 100
100 0.1
1
10
100
1
0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Remark Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
25 20 15 10 5 VDS 0 0 10 20 30 40 50 VDD = 16 V 10 V 4V VGS
10 8 6 4 2 0 60 QG - Gate Charge - nC
100
10
1 0.1
1
10
100
ID - Drain Current - A
4
Data Sheet G14026EJ2V0DS
VGS - Gate to Source Voltage - V
di/dt = 100A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 30 ID = 10 A
PA1723
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
2.8
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 1200 mm 2 x2.2 mm
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
5
100
FORWARD BIAS SAFE OPERATING AREA
ID(pulse) = 52 A
R t VG (a
) L 10 (on S = DS
d ite im V)
PW
10 ms
=1
ID(DC) = 13 A
10
ms
ID - Drain Current - A
10
Po we
0m
s
1
rD
iss
ipa
tio
nL
im
ite
d
0.1 TA = 25C Single Pulse 1 10 100
Remark Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
0.01 0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C/W
10
1
0.1
0.01 0.001
Mounted on ceramic substrate of 1200mm2 x 2.2mm Single Pulse
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet G14026EJ2V0DS
5
PA1723
[MEMO]
6
Data Sheet G14026EJ2V0DS
PA1723
[MEMO]
Data Sheet G14026EJ2V0DS
7
PA1723
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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